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| (R) STD1805 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA Ordering Code STD1805T4 STD1805-1 s Marking D1805 D1805 Shipment Tape & Reel Tube s s s s VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix "T4") 3 2 1 3 1 IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") APPLICATIONS: CCFL DRIVERS s VOLTAGE REGULATORS s RELAY DRIVERS s HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS s INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 150 60 7 5 10 2 15 -65 to 150 150 Unit V V V A A A W o o C C November 2003 1/8 STD1805 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 8.33 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 40 V V EB = 4 V I C = 100 A 150 Min. Typ. Max. 0.1 0.1 Unit A A V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage I C = 1 mA 60 V I E = 100 A 7 V V CE(sat) IC IC IC IC = = = = 100 mA 2A 3A 5A I B = 5 mA I B = 50 mA I B = 150 mA I B = 200 mA I B = 100 mA V CE = 2 V V CE = 2 V V CE = 2 V I C = 50 mA f = 1 MHz 200 85 20 150 200 0.9 50 300 400 600 1.2 400 mV mV mV mV V V BE(sat) h FE Base-Emitter Saturation Voltage DC Current Gain IC = 2 A I C = 100 mA IC = 5 A I C = 10 A V CE = 10 V V CB = 10 V fT C CBO Transition frequency Collector-Base Capacitance RESISTIVE LOAD Turn- on Time Storage Time Fall Time 150 50 MHz pF t ON ts tf IC = 1 A I B1 = - I B2 = 0.1 A V CC = 30 V 50 1.35 120 ns s ns * Pulsed: Pulse duration = 300s, duty cycle = 1.5 % 2/8 STD1805 Derating Curve DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 3/8 STD1805 Switching Times Resistive Load Switching Times Resistive Load Switching Times Resistive Load Switching Times Inductive Load Switching Times Inductive Load 4/8 STD1805 Figure 1: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/8 STD1805 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80 0.80 10 o mm TYP. MAX. 2.40 1.10 1.30 0.90 5.40 0.85 0.30 0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00 0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031 MIN. 0.087 0.035 0.028 0.025 0.204 2.20 0.90 0.70 0.64 5.20 inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 0.033 0.012 0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.031 10 o 0.039 P032N_E 6/8 STD1805 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 7/8 STD1805 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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